INVESTIGATION OF THE WIDTH OF THE TRANSITION LAYER IN A SILICIDE-SILICON BILAYER SYSTEM
This work presents the results of a study on the parameters of the energy bands of thin films of silicon (Si) and barium disilicide (BaSi₂), as well as the characteristics of the transitional layer between them. Ultraviolet photoelectron spectroscopy (UPS) was used to determine the bandgap width (Eg) and the position of the valence band maximum (EV). A comprehensive approach, including optical electron spectroscopy (OES), UPS, scanning electron microscopy (SEM), and X-ray structural analysis, allowed for the investigation of the composition, surface morphology, and electronic structure of the BaSi₂/Si/BaSi₂/Si (111) nanofilm system. This system was obtained by implanting barium ions (Ba⁺) into silicon followed by annealing. The work determined the parameters of the energy bands and constructed the energy band diagram of the Si/BaSi₂/Si system. Additionally, the depth of formation and thickness of the BaSi₂ layer were studied depending on the energy of the implanted Ba⁺ ions in the range from 0.5 keV to 30 keV. The obtained results are of great importance for understanding the electronic properties and potential applications of such systems in optoelectronics and energy devices.
1. Гомоюнова М.В., Пронин И.И., Галль Н.Р., Молодцов С.Л., Вялых Д.В. // ФТТ. 2003. Т. 45. Вып. 8. С. 1519–1522.
2. Нормурадов М.Т., Рысбаев А.С., Нормурадов Д.А., Турсунметова З.А.. // Тезисы докладов 50-й международной Тулиновской конференции по физике взаимодействия заряженных частиц с кристаллами. Москва 2021. с.140.
3. Алексеев А.А., Олянич Д.А., Утас Т.В., Котляр В.Г., Зотов А.В., Саранин А.А. // ЖТФ. 2015. T. 85. Вып. 10. С. 94– 100 4. Алексеев А.А., Олянич Д.А., Утас Т.В., Котляр В.Г., Зотов А.В., Саранин А.А. // ЖТФ. 2015. T. 85. Вып. 10. С. 94– 100
5. Dubinin D.V., Geringer V. // Bulletin of the Tomsk Polytechnic University. 2015. Vol. 326, № 3. p. 58-62.
6. Kirilin A.N., Tkachenko S.I., Salmin V.V.,et.al.// 2015. Vol.14, № 4. p.58-71. doi: 10.18287/2412-7329-2015-14-4-58-71
7. Hara K.O., Nakagawa Y., Suemasu T., Usami N. // Selection and/or peer-review under responsibility of the scientific committee of Symposium 2015 ICMAT. p.28-31. doi: 10.1016/j.proeng.2015.08.1103.
8. Galkin N.G., Goroshko D.L., Dubov V.L., Fomin D.V., Galkin K.N., Chusovitin E.A., Chusovitina S.V. // Japanese Journal of Applied Physics 59, SFFA11 (2020). P. SFFA11-1-7. doi.org/10.35848/1347-4065/ab6b76.
9. Yamashita Y., Sato T., Saitoh N., Yoshizawa N., Toko K., Suemasu T. // J. Appl. Phys. 2019. 126, 215301-1-215301-
7. doi: 10.1063/1.5128690.
10. Эргашов Ё.С., Умирзаков Б.Е. // Журнал технической физики, 2018, том 88, вып.
12. c. 1859-1862. doi:10.21883/JTF.2018.12.46788.12-18.
11. Umirzakov B.E., Tashmukhamedova D.A., Tashatov A.K., Mustafoeva N.M., Muradkabilov D.M. // Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111) // Semiconductors, 2020, 54(11), стр. 1424–1429 12. K. Tashatov, N. M. Mustafoyeva // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, Vol. 14, No. 1, pp. 81–84.
13. Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K., Mustafoeva, N.M. //Electronic and Optical Properties of NiSi2/Si Nanofilms // Technical Physics, 2019, 64(5), стр. 708–710
14. Эргашов Ё.С// Журнал технической физики, 2017, Том 87, вып. 5. с.758-761.
15. Умирзаков Б.Е., Ташмухамедова Д.А., Рузибаева М.К., Ташатов А.К., Донаев С.Б., Мавлянов Б.Б. // Журнал технической физики, 2013, Том 83, вып. 9. с. 146-149.
Copyright (c) 2025 «ACTA NUUz»
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
.jpg)
1.png)
