UCHKUN ASHIROV, Rustam USANOV; ALISHER NURIMOV, Tolganoy SHARAFOVA. ELECTRICAL PROPERTIES AND ELECTRONIC STRUCTURE OF ZN DIFFUSION COMPENSATED AND STRONGLY COMPENSATED SILICON . «ACTA NUUz», [S. l.], v. 3, n. 3.1.1, p. 455–458, 2025. DOI: 10.69617/nuuz.v3i3.1.1.8039. Disponível em: http://journals.nuu.uz/index.php/actanuuz/article/view/8039. Acesso em: 5 dec. 2025.