FORMATION OF SILICIDE PHASES ON THE SILICON SURFACE AS A RESULT OF Fe–Co–Ni ION IMPLANTATION

This article is devoted to a comprehensive analysis of the physico-chemical mechanisms underlying the formation of silicide phases in the near-surface region of silicon substrates following ion implantation with Fe, Co, and Ni ions. SRIM/TRIM-based simulations were employed to evaluate ion energy loss channels, primary knock-on atom (PKA) generation processes, defect density, and depth-dependent implant concentration profiles. A SIMNRA-based Rutherford Backscattering Spectrometry (RBS) multilayer model was used to determine layer thicknesses, interdiffusion boundaries, elemental kinematic factors, and backscattering coefficients of individual components. The thermodynamic stability regions of silicide phases were identified using 2D and 3D phase diagrams for the Fe–Co–Ni–Si ternary system, illustrating the Gibbs free energy landscape and enabling localization of stable phase existence domains. The 3D crystallographic lattice model of FeSi₂ was applied to describe epitaxial growth and phase evolution at the atomic and crystalline structural level. As a result of integrated multiscale modeling, a scientifically grounded approach was developed to predict and explain the sequential stages in high-quality transition-metal silicide phase formation on silicon, providing insight into their applicability for next-generation nanoelectronics