COMPARATIVE STRUCTURAL ANALYSIS OF β-Ga2O3 THIN FILMS DEPOSITED ON p-TYPE Si(111) AND Si(100) SUBSTRATES VIA SOL-GEL SPIN COATING
β-Gallium oxide (β-Ga2O3) thin films were successfully synthesized on p-type Si(111) and Si(100) substrates using the sol-gel spin-coating technique followed by thermal annealing. X-ray diffraction (XRD) analysis confirmed the formation of monoclinic βGa2O3 on both substrates. The influence of substrate orientation on crystallite size, lattice strain, and dislocation density was systematically examined. The crystallite size of β-Ga₂O₃ deposited on Si(100) (34.2 nm) was larger than that on Si(111) (31.7 nm), while both strain and dislocation density decreased with Si(100), indicating improved crystal quality. The results demonstrate that substrate orientation plays a crucial role in determining the structural properties of β-Ga2O3 films, which is essential for optimizing their performance in optoelectronic and power device applications
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