SOL–GEL SPIN-COATING USULI ORQALI p-TIPLI Si(111) VA Si(100) SUBSTRATLARIDA O‘STIRILGAN βGa2O3 YUPQA PLYONKALARINING STRUKTURAVIY TAHLILI
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β-galliy oksid (β-Ga2O3) yupqa plyonkalari sol–gel aylantirish (spin-coating) usuli yordamida p-tipli Si(111) va Si(100) substratlarida muvaffaqiyatli sintez qilindi va keyinchalik issiqlik bilan pishirish (annealing) jarayoni o‘tkazildi. Rentgen difraksiyasi (XRD) tahlili ikkala substratda ham monoklinik β-Ga2O3 fazasining hosil bo‘lganligini tasdiqladi. Substrat yo‘nalishining kristallit o‘lchami, panjara deformatsiyasi va dislokatsiya zichligiga ta’siri tizimli ravishda o‘rganildi. Si(100) ustiga cho‘ktirib o‘stirilgan β-Ga2O3 plyonkasining kristallit o‘lchami (34,2 nm) Si(111) dagidan (31,7 nm) kattaroq bo‘lib, bunda deformatsiya va dislokatsiya zichligi kamaygani kuzatildi. Bu esa kristall sifatining yaxshilanganini ko‘rsatadi. Natijalar shuni ko‘rsatadiki, substrat yo‘nalishi β-Ga2O3 plyonkalarining tuzilma xossalarini belgilashda muhim omil hisoblanadi, bu esa ularning optoelektron va quvvatli qurilmalardagi samaradorligini oshirish uchun zarurdir.
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