SIMULATION OF THE CURRENT–VOLTAGE CHARACTERISTICS OF A TUNNEL DIODE UNDER THE INFLUENCE OF PHOTOCURRENT AND PHONONS

In this study, a comprehensive current model for tunnel diodes has been developed. The model includes not only tunneling, diffusion, and excess currents, but also the photocurrent generated under illumination. Additionally, phonon-assisted tunneling processes - namely phonon absorption and phonon emission - resulting from electron–phonon interactions have been taken into account. The calculated current–voltage (I–V) characteristics under illuminated conditions demonstrate a decrease in the total current. Furthermore, it is shown that the value of the photocurrent increases proportionally with optical intensity and wavelength. In the case of phonon absorption, electrons gain additional energy, the tunneling window expands, and the peak current increases by approximately 15–20%. Conversely, during phonon emission, part of the electron energy is lost, the tunneling probability decreases, and the maximum current drops by about 10–12%. The obtained results indicate that considering both phonon and photon processes significantly enhances the potential application of tunnel diodes in optoelectronic and photodetector devices. The proposed model provides a theoretical foundation for the development of tunnel diodes as high-frequency, light-sensitive, and energy-efficient devices.