FOTOTOK VA FONON TA’SIRIDA TUNNEL DIODINING VOLT-AMPER XARAKTERISTIKASINI SIMULYATSIYA QILISH
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Ushbu maqolada tunnel diodlar uchun yagona tok modeli ishlab chiqildi. Model tarkibiga nafaqat tunnel, diffuziya va ortiqcha toklar, balki yoritilish ta’sirida hosil bo‘ladigan fototok ham kiritilgan. Bundan tashqari, elektron–fonon o‘zaro ta’siri natijasida yuzaga keladigan fonon yordamida tunnel jarayonlari – ya’ni fonon yutilishi va fonon nurlanishi – ham hisobga olingan. Hisoblangan tok–kuchlanish (I–V) xarakteristikalari yoritilgan holatda umumiy tokning pasayishini ko‘rsatdi. Shuningdek, fototokning qiymati optik intensivlik va to‘lqin uzunligiga mutanosib ravishda ortishi namoyish etildi. Fonon yutilishi holatida elektronlar qo‘shimcha energiya oladi, tunnel kanali kengayadi va cho‘qqi toki taxminan 15–20% ga oshadi. Aksincha, fonon nurlanishi jarayonida elektron energiyasining bir qismi yo‘qoladi, tunnel ehtimoli kamayadi va maksimal tok taxminan 10–12% ga kamayadi. Olingan natijalar shuni ko‘rsatadiki, fonon va foton jarayonlarini hisobga olish tunnel diodlarning optoelektronika va fotodetektor qurilmalardagi qo‘llanish imkoniyatlarini sezilarli darajada kengaytiradi. Taklif etilgan model tunnel diodlarini yuqori chastotali, yorug‘likka sezgir va energiya tejamkor qurilmalar sifatida ishlab chiqish uchun nazariy asos yaratadi
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