Si+ IONLARINI IMPLANTATSIYA QILISH NATIJASIDA Mo DA HOSIL QILINGAN YUPQA MoSi2 PLYONKALARINING TARKIBI, TUZILISHI VA XOSSALARI
For the first time, homogeneous MoSi2 films with variable thickness in the range of 25-100Å were obtained using the method of
implanting Si+ ions into Mo with energies from 1 keV to 5 keV. The composition, electronic, and crystal structure of these films
were studied. It was established that the polycrystalline MoSi2 film is an n-type semiconductor with a band gap of Eg = 0.75 eV.
The valence band of MoSi2 exhibits three peaks. A MoSi2 film of thickness ~90–100Å almost completely prevents O2 penetration
into Mo up to a temperature of 1200K
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