FORMATION OF SILICON SURFACE MORPHOLOGY DURING ELECTROCHEMICAL ETCHING
This article provides a detailed description of the technology for obtaining porous silicon layers using the anodic etching method.
During the research, key technological parameters influencing the electrochemical etching process, including the composition of
the HF-acid-based electrolyte, current density, voltage values, and etching duration, were systematically analyzed. Furthermore,
the impact of the silicon wafer's crystalline state on the formation of the porous structure was investigated. As a result of the
conducted experiments, optimal technological regimes were identified, allowing for precise control over critical morphological
indicators such as pore diameter, depth, and layer homogeneity. Based on the findings, necessary technological recommendations
have been developed to stabilize the formation process of porous silicon and to implement this method into industrial production.
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