MEASUREMENT OF THE BAND GAP USING THE SPECTROSCOPY METHOD OF THIN FILMS

The properties of thin film silicides and semiconductor silicon films have been studied by IR spectroscopy and UV
spectroscopy. At present, silicon-based heterostructured nanocomposites are of great interest. Despite the fact that silicon
semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural
films are new materials, the study of which began relatively recently.
The band gap energy was determined using infrared and ultraviolet spectroscopy of heterostructured Mn4Si7/Si(111),
CrSi2/Si(111), and CoSi2/Si(111) thin films. Absorption, transmission, and diffuse reflectance spectra were obtained using
FT-IR spectroscopy instruments and a UV spectrophotometer. The thickness of a layer of a thin film was measured. The band
gap calculated from the transmission spectra was in the range of 0.32–1.31 eV for films deposited on silicon substrates and in
the range of 0.36–1.25 eV for glass substrates.