POSSIBILITIES OF MAKING A STRAIN GAUGE FROM SILICATE GLASS DOPED WITH RUTHENIUM DIOXIDE

Thick film resistor, temperature coefficient of resistance (TCR); gauge factor (GF), doped silicate glass, RuO2 metal oxide.

Authors

In this paper, the effects of resistor paste components and baking temperature on the temperature coefficient of resistance (TCR) of a thick-film resistor were systematically investigated. Thick film resistors prepared from RuO2 concentrations (from 10 wt% to 30 wt%) baked at different temperatures on an Al2O3 substrate were investigated. The relationship between resistor resistance, TCR and scale factor (GF) was studied. The results show that TCR also increases with increasing RuO2 concentration and baking temperature. Near the minimum (Tmin) of the resistancetemperature curve, the temperature has the least effect on the resistance value, and a thick-film resistor can be considered insensitive to temperature in a certain range. The ratio of TCR to GF and Tmin depends on the film resistance of thick film resistors. By varying the concentration of the conductive phase and the baking temperature, the film resistance of thick-film resistors can be controlled, and lowtemperature strain gauges can be achieved for different ambient temperatures.