MODELING THE DEPENDENCE OF THE SURFACE DENSITY OF STATES OF CdS/Si(p) SEMICONDUCTORS ON TEMPERATURE AND MAGNETIC FIELD
This article examines the physical properties of the surface of the CdS/Si(p) material. The dependence of the density of
surface states of the p-type Si(p) semiconductor on the magnetic field is applied. For the first time, a mathematical model has
been developed that determines the influence of temperature and magnetic field on the density of surface states of a
semiconductor.
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