KOBALT IONLARI BILAN ION IMPLANTATSIYALANGAN KREMNIY SIRTINING KRISTAL TUZILISHIGA TOBLASHNING TA’SIRI
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Maqolada kremniyda implantatsiya qilingan temir va kobalt atomlarining tarqalish profillarini radiatsiya dozasi va tavlanish haroratiga qarab o'rganish natijalari haqida ma'lumot berilgan, bu esa Ruterford qaytaruvchi spektroskopiya (RBS) yordamida amalga oshiriladi. Termik tavlanishning temir, kobalt va ayniqsa kislorodning tarqalishiga ta'siri o'rganildi. Mualliflar ma'lum issiqlik bilan ishlov berish sharoitida va ma'lum nurlanish dozalarini qo'llash orqali epitaksial silitsidlar deb ataladigan yagona kristall yuzasida o'tkazuvchan yoki metall qatlamlar rolini o'ynashi mumkinligini qat'iy tavsiya qiladi. Dopantlarning topologik taqsimotini va aralashmalarning o'zaro ta'sirini tahlil qilish uchun RBS usulini ko'rib chiqish mumkin.
Амин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, & Шохрух САЙФУЛЛОЕВ,. (2024). KOBALT IONLARI BILAN ION IMPLANTATSIYALANGAN KREMNIY SIRTINING KRISTAL TUZILISHIGA TOBLASHNING TA’SIRI. «O‘zMU XABARLARI», 3(3.1), 492–497. https://doi.org/10.69617/nuuz.v3i3.1.1918
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11. R.T. Tung. A novel technique for ultrathin CoSi2 layers: oxide mediated epitaxy. // Jpn. J. Appl. Phys. 1997. V. 36. Part 1, No. 3b. P. 1650 - 1654.
2. Эгамбердиев Б.Э. , Холлиев Б.Ч., Маллаев А. С., Зоирова М. Э., Эшонхонов А. “Получение пленок CoSi2/Si (100) и анализ их морфологии и стехиометрии методами молекулярно-лучевой,твердофазной и реактивнойэпитаксии” ЭОМ, Молдова, 2007, №1, С.88-92.
3. К. Sakamoto, Т. Maeda, and М. Hasegawa. Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs //Thin Solid Films. - 369. - 2000. - C.240-243.
4. Эгамбердиев Б.Э. , Маллаев А. С. Кремниевые силицидные структуры на основе ионного легирования. Т.: изд. «Наука и технология» 2019г. 168с.
5. Egamberdiev B.E., Holliev B.Ch., Mallaev A.S., Zoirova M.E., Eshonkhonov A., Preparation of CoSi2/Si (100) films and analysis of their morphology and stoichiometry by molecular beam, solid-state and reactive epitaxy // EOM, Moldova, 2007, No. 1, P.88-92.
6. B.E. Egamberdiev, A.T. Rakhmanov, A.S. Mallaev, A.A Rashidov The electron-spectroscopic Investigations of the epitaxial CoSi2 films on silicon // International Journal of Advanced Research in Science, Engineering and Technology 2018, vol.5, Issue 1.p.5050-5053.
7. K. Raian, L.M. Hsiung, J.R. Jimenez, L.J. Schowaller, K.V. Ramanathan, R.D. Thompson, S.S. Iyer. Microstructural stability of epitaxial CoSi2/Si(001) interfaces. // J. Appl. Phys. 1991. V. 70. No. 9. P. 4853 - 4856.
8. Rangelov G., Augustin P., Stober J., Th. Fauster. Initial stages of epitaxial CoSi2 formation on Si(100) surfaces. // Phys. Rev. B. 1994. V. 49. No. P. 7535-7542.
9. Karpenko O.P., Yalisove S.M. CoSi2 heteroepitaxy on patterned Si(100) substrates. // J. Appl. Phys. 1996. V. 80. No. 11. P. 6211 - 6218.
10. Ikegami H., Ikeda H., Zaima S., Yasuda Y.. Thermal stability of ultra¬thin CoSi2 films on Si(100)-2xl surfaces. // Appl. Surf. Sci. 1997. V. 117/118. P. 275 - 279.
11. R.T. Tung. A novel technique for ultrathin CoSi2 layers: oxide mediated epitaxy. // Jpn. J. Appl. Phys. 1997. V. 36. Part 1, No. 3b. P. 1650 - 1654.
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