ION-PLAZMA CHANGLATISH USULI ORQALI OLINADIGAN NIKEL SILITSID YUPQA QATLAMLARINING SIRT MORFOLOGIYASI VA TUZILMA XUSUSIYATLARI
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Aniqlanishicha, 800 K da ortiqcha qizdirish aglomeratsiya jarayonlariga olib kelishi mumkin; shu sababli optimal tоvlanish harorati 750 K etib belgilandi. Bundan tashqari, dastlabki amorf yoki mayda donali kristall tuzilma kattaroq kristall domenlarga o‘zgarib, NiSi2 fazasi hosil bo‘lish jarayonining boshlanishini ko‘rsatdi. Energiya-dispersion rentgen spektroskopiyasi (EDX) namunada kislorod, uglerod va boshqa qo‘shimcha cho‘qqilarning deyarli yo‘qligini aniqladi, bu esa namunadagi yuqori tozalik darajasini tasdiqlaydi. Tadqiqot natijalari shuni ko‘rsatadiki, Ni/Si chegarasida ion-plazma changlatish va keyingi issiqlik diffuziyasi natijasida, ehtimol, NiSi2 bo‘lgan silitsid fazalari hosil bo‘lgan
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