INTERFACE STATES AND CHARGE FORMATION MECHANISMS IN TiO₂-BASED MIS STRUCTURES WITH A SiO₂ INTERFACIAL LAYER
Due to the continuous scaling down of semiconductor devices, the need for materials with high dielectric permittivity is increasing.
Titanium dioxide (TiO₂) is considered a promising material due to its high dielectric constant; however, its direct contact with a
silicon (Si) substrate leads to problems associated with a high density of interface states (Dit), enhanced charge trapping processes,
and increased leakage current density. In this work, the effect of a thin silicon dioxide (SiO₂) interfacial layer on improving the
interface properties in Si/TiO₂ structures is investigated. Within the framework of the study, capacitance–voltage (C–V) and current
density–voltage (J–V) characteristics of the Al/TiO₂/SiO₂/Si multilayer MIS structure were analyzed, and the interface state density
(Dit) as well as leakage current mechanisms were evaluated.
1. Robertson J. High dielectric constant oxides // Eur. Phys. J. Appl. Phys., 2004.
2. Taur Y., Ning T.H. Fundamentals of Modern VLSI Devices. – Cambridge, 2013.
3. Nicollian E.H., Brews J.R. MOS Physics and Technology. – Wiley, 1982.
4. Sze S.M., Ng K.K. Physics of Semiconductor Devices. – Wiley, 2007.
5. Mackus A.J.M. et al. Atomic layer deposition for nanotechnology // Nature Reviews Materials, 2019.
6. Knoops H.C.M. et al. Status and prospects of ALD // J. Vac. Sci. Technol. A, 2020.
7. Chen Y. et al. Interface engineering of high-k dielectrics on Si // Applied Surface Science, 2020.
8. Wang Z. et al. Charge trapping and hysteresis in MOS structures // IEEE TED, 2020.
9. Zhang L. et al. SiO₂ interfacial layer effects in high-k stacks // Thin Solid Films, 2021
Copyright (c) 2026 «ACTA NUUz»
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
.jpg)
1.png)
