SIO₂ ORALIQ QATLAM ORQALI TIO₂ ASOSIDAGI MDY TUZILMALARDA CHEGARA SIRT HOLATLARI VA ZARYAD HOSIL BO‘LISH MEXANIZMLARI
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Yarimo‘tkazgich qurilmalarining o‘lchamlari muntazam ravishda kichrayib borayotgani sababli, yuqori dielektrik
singdiruvchanlikka ega materiallardan foydalanish zarurati ortib bormoqda. Titan dioksidi (TiO₂) yuqori dielektrik doimiysi tufayli
istiqbolli material hisoblanadi, biroq uning kremniy (Si) asos bilan bevosita tutashuvi yuqori zichlikdagi chegara sirt holatlari (Dit),
zaryad tutish jarayonlarining kuchayishi hamda oqish toki zichligining ortishi bilan bog‘liq muammolarni keltirib chiqaradi. Ushbu
ishda Si/TiO₂ tuzilmalarda interfeys xossalarini yaxshilash maqsadida yupqa kremniy dioksidi (SiO₂) oraliq qatlamining ta’siri
o‘rganildi. Tadqiqot doirasida Al/TiO₂/SiO₂/Si ko‘p qatlamli MDY tuzilma uchun sig‘im–kuchlanish (C–V) va tok–kuchlanish (J–
V) xarakteristikalari tahlil qilinib, chegara sirt holatlari zichligi (Dit) hamda oqish toki mexanizmlari baholandi.
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