Tabiiy fanlar

NICKEL SUBSTRATE FOR GRAPHENE SYNTHESIS

Ni surfaces, chemical vapor deposition (CVD) graphene, Molecular Dynamics, surface energy.

Authors

  • Tursunpo‘lat JO‘RABOYEV Tursunpo‘lat JO‘RABOYEV, O‘zR FA, Ion-Plazma va Lazer Texnologiyalari Instituti, kichik ilmiy xodimi, Uzbekistan
  • Eldorbek BAKIROV O‘zR FA, Ion-Plazma va Lazer Texnologiyalari Instituti, stajyor tadqiqotchi, Uzbekistan
  • O`tkir O`LJAYEV O‘zR FA, Ion-Plazma va Lazer Texnologiyalari Instituti, PhD talabasi, Uzbekistan
  • Umedjon XALILOV O‘zR FA, Ion-Plazma va Lazer Texnologiyalari Instituti, bosh ilmiy xodim Belgiya, Antverpen Universiteti, Plasmant tadqiqot guruhi, Uzbekistan

Due to its electronic and mechanical properties and high chemical stability, research is being conducted on growing graphene by
various methods. Among them, CVD is one of the most effective methods, but one of the main problems in graphene growth is
the correct selection of the metal catalyst surface. Therefore, in this research work, the probability of graphene growth on high
Ni(331) and low Ni(111) index surfaces was evaluated by molecular dynamics (MD) method. It was found that the surface
energy of the g-Ni(331) surface with graphene is lower (0.5 J/m2) than that of the g-Ni(111) surface, which is considered the
most effective in growing graphene. This means that it is possible to grow graphene on high-index Ni(331) surfaces as well as on
low-index Ni(111) surfaces, which can be used to make nanodevices (nanotransistor, batteries, water filters, capacitors, etc.).