GRAFEN SINTEZI UCHUN YUQORI INDEKSLI (331) NIKEL TAGLIGI
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Elektron va mexanik xususiyatlari hamda yuqori kimyoviy barqarorligi sababli grafenni turli xil usullar bilan o‘stirish bo‘yicha
taqdqiqotlar olib borilmoqda. Bular orasida CVD eng samarali usullardan biri bo‘lsada, grafen o‘stirishda asosiy muammolardan
biri metall katalizator sirtini to‘g‘ri tanlash. Shu sababli, ushbu tadqiqot ishida, yuqori Ni(331) va past Ni(111) indeksli sirtlarda
grafen o‘sish ehtimoli solishtirilgan holda molekulyar dinamika (MD) usuli orqali baholandi. Grafenli g-Ni(331) sirtining sirt
energiyasi grafen o‘stirishda eng samarali hisoblanadigan g-Ni(111) sirtidan ham (0.5 J/m 2 ) pastroq bo‘lishi aniqlandi. Bu esa,
yuqori indeksli Ni(331) sirtlarda ham past indeksli Ni(111) sirtlardagi kabi grafen o‘stirish mumkinligi, ular yordamida
nanoqurilmalar (nanotranzistor, batareykalar, suv filtrlari, kondensatorlar va h.k) hosil qilish bo‘yicha eksperimentatorlarga
tavsiyalar berish mumkin.
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