ELECTRICAL PROPERTIES AND ELECTRONIC STRUCTURE OF ZN DIFFUSION COMPENSATED AND STRONGLY COMPENSATED SILICON
This scientific article presents the synthesis of heavily compensated p(n)-Si<P, Zn> substrates with various conductivity types and a wide range of specific electrical resistances at room temperature by diffusing Zn into the semiconductor substrate to form additional levels in the energy diagram of MOS structures. The aim is to enhance the sensitivity of the substrate to external influences. The experimental results provide values for mobility, charge carrier concentration, and specific resistance, based on which certain additives were introduced into the energy diagram of the silicon substrate, considering the experimental data
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