TAILORING MEMRISTIVE BEHAVIOR IN NIO THIN FILMS VIA POST-ANNEALING TIME AND ELECTRODE ENGINEERING
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Nickel oxide (NiO) thin films were synthesized by the sol–gel spin-coating method and annealed at 400 °C for 2 and 5 hours to investigate the effect of post-annealing time on their memristive behavior. Silver (Ag) and indium (In) were employed as top electrodes. The optical bandgap was determined via Tauc plot analysis using reflectance data. Structural properties were examined by X-ray diffraction (XRD), and the memristive switching behavior was characterized by current–voltage (I–V) measurements using a Keithley-2460 SourceMeter. It was found that both annealing time and electrode type significantly affect the switching behavior and material properties.
1. S. Tappertzhofen, D. Valov, and R. Waser, "Dependence of the electrical switching behavior in Ag/oxide-based memristive systems on the electrode material," Nanotechnology, vol. 23, no. 14, p. 145703, 2012.
2. D. Ielmini and R. Waser, Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, Wiley-VCH, 2015.
3. T. Chen, C. Liao, J. Liu, and L. Wang, "Preparation of NiO thin films by sol–gel method and their application in solar cells," Journal of Alloys and Compounds, vol. 509, no. 5, pp. 2316–2319, 2011.
4. Z. Wang, H. Wu, G. Burr, et al., "Resistive switching materials for information processing," Nature Reviews Materials, vol. 5, no. 3, pp. 173–195, 2020.
5. S. Yu, "Resistive random access memory (RRAM) materials and devices: Modeling and applications," Materials Today, vol. 18, no. 5, pp. 252–264, 2015.
6. M. Lanza, "A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope (CAFM)," Materials, vol.
7, no. 3, pp. 2155–2182, 2014. 7. J. Yao, Z. Sun, L. Zhong, et al., "Resistive switching in nanogap systems on SiO₂ substrates," Nano Letters, vol. 10, no. 10, pp. 4105–4110, 2010.
8. C. H. Ahn, J. W. Lee, and H. J. Lee, "Growth and characterization of p-type NiO thin films by sputtering," Journal of Applied Physics, vol. 92, no. 6, pp. 3684–3687, 2002.
9. Z. Zhang, M. Zhu, and Y. Li, "Preparation of NiO thin films for resistive switching memories," Journal of Materials Science: Materials in Electronics, vol. 23, no. 3, pp. 636–640, 2012. 10. D. Lee, S. Lee, and H. Hwang, "Resistance switching of NiO thin films for nonvolatile memory applications," Applied Physics Letters, vol. 90, no. 12, p. 122104, 2007.
11. M. H. Lee, J. W. Park, and S. H. Kim, "Annealing effect on electrical properties of NiO thin films," Journal of the Korean Physical Society, vol. 56, no. 1, pp. 132–136, 2010.
12. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, vol. 6, no. 11, pp. 833–840, 2007. 13. J. Yao, Z. Sun, and L. Zhong, "Resistive switching in nanogap systems on SiO₂ substrates," Nano Letters, vol. 10, no. 10, pp. 4105–4110, 2010.
14. G. Bersuker, "Metal oxide resistive memory switching mechanism based on conductive filament properties," Journal of Applied Physics, vol. 110, no. 12, p. 124518, 2011.
15. S. Yu, "Resistive random access memory (RRAM) materials and devices: Modeling and applications," Materials Today, vol.
18, no. 5, pp. 252–264, 2015. 16. Z. Wang, H. Wu, G. Burr, et al., "Resistive switching materials for information processing," Nature Reviews Materials, vol. 5, no. 3, pp. 173–195, 2020.
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