EFFECTS OF MONOLAYER ADSORPTION OF CS ATOMS ON THE ELECTRONIC STRUCTURE, EMISSION AND OPTICAL PROPERTIES OF GAP (111)
Using the methods of ultraviolet photoelectron spectroscopy, light absorption spectroscopy and true secondary electrons, the effect of deposition of Cs atoms with a thickness of 1 monolayer on the density of states of electrons in the valence and conduction bands, the parameters of the energy band, and the quantum yield of photoelectrons were studied. It was found that when cesium is deposited on the surface of GaP (111) single crystals with a thickness of 1 monolayer, the value of Eg and the position of the maxima of the density of states of valence electrons remain virtually unchanged, the work function of photoelectrons decreases to 1.94 eV, and the quantum yield of photoelectrons increases by 5 or more times. Key words: Surface, thickness, work function, monolayer, structure, single crystal, deposition
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