RAMAN ANALYSIS OF STRUCTURAL PROPERTIES OF COBALT-DOPED n-TYPE MONOCRYSTALLINE SILICON
In this work, the effect of cobalt (Co) diffusion on structural and phase transformations in monocrystalline n–Si (KEF-35 Ω·cm)
samples was investigated using Raman spectroscopy. In the initial sample, the Si–Si optical phonon peak was observed at 523.93
cm⁻¹ with an intensity of 11,500 arbitrary units. In the thermally treated control sample, the peak intensity increased to 12,500,
indicating a reduction of internal stresses in the silicon crystal lattice under high-temperature conditions. After cobalt diffusion, the
intensity of the Si–Si peak sharply decreased to 2,700, and new Raman peaks appeared at 180, 272, and 358 cm⁻¹. These peaks
confirm the formation of cobalt silicides (CoSi and CoSi₂). In the sample where the surface layer (3 μm) was removed, the Si–Si
peak intensity recovered up to 8,500, while silicide peaks disappeared. These results indicate that the thickness of the cobalt silicide
layer is within approximately 3 μm.
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