KOBALT BILAN LEGIRLANGAN n-TIPLI MONOKRISTALLI KREMNIYNING STRUKTURAVIY XOSSALARINI RAMAN TAHLILI
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Ushbu ishda monokristalli n–Si (KEF-35 Ω·cm) namunalariga kobalt (Co) diffuziyasining strukturaviy va fazaviy o‘zgarishlarga
ta’siri Raman spektroskopiyasi yordamida o‘rganildi. Dastlabki namunada Si–Si optik fonon cho‘qqisi 523,93 cm⁻¹ da kuzatilib,
intensivligi 11500 nisbiy birlikni tashkil etdi. Termik ishlov berilgan nazorat namunasida cho‘qqi intensivligi 12500 gacha oshdi,
bu kremniy panjarasidagi deformatsiyalarning kremniy kristall panjarasida mavjud bo‘lgan ichki kuchlanishlarning yuqori harorat
ta’sirida kamayishini ko‘rsatadi. Kobalt diffuziyasidan so‘ng Si–Si cho‘qqisi intensivligi 2700 gacha keskin kamaydi va 180, 272
hamda 358 cm⁻¹ da yangi Raman cho‘qqilari paydo bo‘ldi. Ushbu cho‘qqilar kobalt silitsidlarining (CoSi va CoSi₂) hosil
bo‘lganligini tasdiqlaydi. Sirt qatlami (3 mkr) olib tashlangan namunada Si–Si cho‘qqisi intensivligi 8500 gacha tiklanib, silitsid
cho‘qqilari yo‘qoldi. Bu natijalar kobalt silitsid qatlamining qalinligi 3 mikron oraliqda ekanligini ko‘rsatadi.
1. Daliev K.S., Utamuradova Sh.B., Khaitbaev A., Khamdamov J.J., Norkulov Sh.B., and M.B. Bekmuratov, “Defective
Structure of Silicon Doped with Dysprosium,” East Eur. J. Phys. (2), 283 (2024). https://doi.org/10.26565/2312-4334-2024-
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2. X. Kong, Z. Xi, L. Wang, Y. Zhou, Y. Liu, et al., “Recent Progress in Silicon−Based Materials for Performance Enhanced
Lithium Ion Batteries,” Molecules, 28(5), 2079 (2023). https://doi.org/10.3390/molecules28052079
3. K.S. Daliev, S.B. Utamuradova, A. Khaitbaev, J.J. Khamdamov, S.B. Norkulov, and M.B. Bekmuratov, “Defective Structure
of Silicon Doped with Dysprosium,” East Eur. J. Phys. (2), 283-287 (2024). https://doi.org/10.26565/2312-4334-2024-2-30
4. E. Smith, G. Dent, Modern Raman Spectroscopy: A Practical Approach, Wiley, 2019.
5. B. Graczykowski, M. Guedes, M. Almeida, R. R. Reiche, “Raman spectral imaging—A nondestructive, high resolution
analysis technique for local stress measurements in silicon,” Vib. Spectrosc., vol. 42, no. 1, pp. 93–97, 2006.
6. P. A. Temple, C. E. Hathaway, “Multiphonon Raman Spectrum of Silicon,” Phys. Rev. B, vol. 7, no. 8, pp. 3685–3697, 1973.
7. K. Uchida, A. Nara, T. Ito, “Raman scattering from Si–SiO₂ interface,” J. Appl. Phys., vol. 81, no. 1, pp. 269–274, 1997.
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