ELECTRONIC STRUCTURE AND EMISSION PROPERTIES OF TERNARY NANOFILMS FORMED ON THE GaP SURFACE BY LOW-ENERGY ION IMPLANTATION AND SUBSEQUENT ANNEALING
In this work, thin single-crystal nanofilms of GaAlP and GaInP type were fabricated by implanting Al+ and In+ ions into the GaP
surface followed by an annealing process. The obtained structures were comprehensively investigated using Auger electron
spectroscopy, ultraviolet photoelectron spectroscopy, as well as studies of the energy and angular dependences of light absorption
and secondary electron emission. As a result, the main band-structure and emission parameters of Ga0,6Al0,4P/GaP(111) and
Ga0,6In0,4P/GaP(111) nanofilms with a thickness of up to 50 Å were determined. The studies demonstrated the epitaxial growth of
the films and the consistency of their crystallographic orientation with that of the substrate. In particular, the band gap of the
Ga0,6In0,4P film was found to be smaller than that of the substrate, which affects the emission properties of the system, leading to a
certain decrease in the values of σₘ and K. The obtained results are of significant importance for the development of modern
optoelectronic devices based on semiconductor heterostructures.
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