PAST ENERGIYALI ION IMPLANTATSIYASI VA KEYINGI TAVLASH JARAYONIDA GaP YUZASIDA HOSIL QILINGAN UCH KOMPONENTLI NANOPLYONKALARNING ELEKTRON TUZILISHI VA EMISSIYA XUSUSIYATLARI
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Ushbu ishda Al+ va In+ ionlarini GaP yuzasiga implantatsiya qilish hamda keyingi tavlash jarayoni asosida GaAlP va GaInP turidagi
yupqa monokristall nanoplyonkalar hosil qilindi. Olingan tuzilmalar kompleks ravishda Oje-elektron spektroskopiyasi,
ultrabinafsha fotoelektron spektroskopiyasi, yorug‘lik yutilishi hamda ikkilamchi elektron emissiyasining energetik va burchak
bog‘liqliklarini o‘rganish orqali tadqiq etildi. Natijada, qalinligi 50 Å gacha bo‘lgan Ga0,6Al0,4P/GaP(111) va Ga0,6In0,4P/GaP(111)
nanoplyonkalarining asosiy zona-energetik va emissiya parametrlari aniqlandi. Tadqiqotlar plyonkalarning epitaksial tarzda
o‘sishini va ularning kristallografik yo‘nalishlari taglik bilan mos kelishini ko‘rsatdi. Xususan, Ga0,6In0,4P plyonkasida taqiqlangan
zona kengligi taglikka nisbatan kichik bo‘lib, bu holat tizimning emissiya xususiyatlariga ta’sir ko‘rsatadi, ya’ni σₘ va K
qiymatlarining ma’lum darajada kamayishiga olib keladi. Olingan natijalar yarimo‘tkazgichli geterotuzilmalar asosida zamonaviy
optoelektron qurilmalarni yaratishda muhim ahamiyatga ega
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