USP USULIDA OLINGAN SNO₂/ZNO GETEROSTRUKTURALARINING MORFOLOGIK VA STRUKTURAVIY XUSUSIYATLARIGA SN KONSENTRATSIYASINING TA’SIRI
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USP usulida p-Si(100) tagliklarida SnO2/ZnO bilayer geterostrukturalari sintez qilindi. Legirlashdan farqli o‘laroq, yuqori Sn
konsentratsiyali (17.41 at.%) funksional ikki qatlamli tizim yaratildi. XRD tahlili (002) c-o‘qi bo‘ylab teksturalangan vurtzit
strukturasini (kristallitlar 39.8 nm) tasdiqladi. EDX orqali fazalar integratsiyasi va tarkibi (17.41 at.% Sn, 12.44 at.% Zn) aniqlandi.
Ellipsometriya tahlillari SnO2/ZnO/SiO2/Si modeli asosida umumiy qalinlik 248.20 nm va samarali sindirish ko‘rsatkichi n =
1.9466 (632.8 nm) ekanligini ko‘rsatdi. Natijalar USP usulida olingan bilayerlarning optoelektronika uchun shaffof va
o‘tkazuvchan muqobil ekanligini isbotlaydi.
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