DOIMIY XOTIRA ILOVALARI UCHUN CO BILAN LEGIRLANGAN ZNO YUPQA PLYONKALARDA QARSHILIK QAYTA ULANISH EFFEKTI.
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Qarshilikning qayta ulanish hodisalari o‘zining potentsial qo‘llanilishi tufayli so‘nggi avlod doimiy xotiralarining
rivojlanishida beqiyos e’tiborni jalb etdi. Bunday holda, qarshilikli o‘zgaruvchan tasodifiy kirish xotirasi (RRAM) o‘zining
yuqori javob tezligi, yuqori o‘zgara olish qobiliyati, ko‘p bitli saqlash potentsiali va oddiy tuzilishi tufayli keng qiziqish
uyg‘otdi. Co bilan legirlangan ZnO kirishmali magnit yarimo‘tkazgich bo‘lib, qarshilikni qayta ulanish xususiyatini amalga
oshirish juda qiziqarli bo‘ladi.
Ushbu ishda biz kobalt bilan legirlangan ZnO yupqa plyonkalarga asoslangan RRAM tuzilishini o‘rganib chiqdik, ular
takrorlanadigan bipolyar rezistiv qayta ulanish xususiyatini namoyish etadi. Kobalt bilan legirlangan ZnO plyonkalari
ultratovushli purkagichli piroliz usuli bilan yuqori konsentratsiyalashgan n-tipli kremniy (100) taglilariklariga yotqizilgan.
Yuqori qarshilik holatining (HRS) va past qarshilik holatining (LRS) qiymatlari tekshiruv davomida juda oz tebranishlarga
ega bo‘lib, bu mukammal qayta ulanish barqarorligini ko‘rsatadi. HRS ning LRS ga qarshilik nisbati tajribada 80 sikl ichida
2-3 daraja oralig‘ida. Xulosa qilib aytadigan bo‘lsak, Au/Co:ZnO/n+-Si qurilmasida barqaror va qaytariladigan bistable
qarshilikli qayta ulanish hodisasi doimiy xotira ilovalari uchun imkoniyatlarni taqdim etadi.
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