MECHANISMS OF INTERFACIAL INTERACTION AND RECONSTRUCTION OF THE ELECTRONIC STRUCTURE IN SI(GE)/AL(111) AND SI(GE)/CU(111) SYSTEMS
The paper presents a comprehensive study of the formation of interfacial boundaries and the electronic structure in Si/Al(111),
Si/Cu(111), Ge/Al(111), and Ge/Cu(111) nanoheterosystems. Thin films of silicon and germanium were deposited under ultrahigh vacuum conditions followed by thermal treatment. The analysis of composition, structure, and electronic properties was
carried out using Auger electron spectroscopy, electron energy loss spectroscopy, and ultraviolet photoelectron spectroscopy.
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