THEORETICAL AND EXPERIMENTAL INVESTIGATION OF TUNNELING NOISE MECHANISMS IN TUNNEL DIODES UNDER HIGH-FREQUENCY ELECTROMAGNETIC FIELDS
This work is devoted to the theoretical investigation of noise characteristics in tunnel diodes under high-frequency electromagnetic fields. The study considers current fluctuations within the framework of quantum mechanics and shows that, under ideal conditions, the shot noise spectral density follows the relation S=2qI, exhibiting frequency-independent white noise behavior. However, in real devices, the noise spectrum is more complex and includes not only shot noise but also low-frequency 1/f noise associated with trap states and interface imperfections. The tunneling probability is described using the WKB approximation, while the influence of the internal electric field is incorporated through the Franz–Keldysh effect. The results demonstrate that an increase in the electric field leads to a narrowing of the potential barrier and an exponential enhancement of the tunneling probability. The tunnel current and noise characteristics are further analyzed using the Tsu–Esaki formalism, where their dependence on energy spectrum, density of states, and carrier distribution functions is expressed in an integral form.
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