O‘TA YUQORI CHASTOTALI ELEKTROMAGNIT MAYDON SHAROITIDA TUNNEL DIODLARDA TUNNELLANISH SHOVQINI MEXANIZMLARINI NAZARIY TADQIQ ETISH
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Mazkur ish tunnel diodlarda tunnellanish jarayonlarining shovqin xususiyatlarini o‘ta yuqori chastotali elektromagnit maydon sharoitida nazariy tahlil qilishga bag‘ishlangan. Tadqiqotda tunnel tokidagi fluktuatsiyalar kvant mexanik yondashuv asosida ko‘rib chiqilib, ideal holatda shot noise spektral zichligi S=2qI qonuniyatiga bo‘ysunishi va chastotaga bog‘liq bo‘lmagan oq shovqin xarakteriga ega ekanligi ko‘rsatildi. Shu bilan birga, real qurilmalarda shovqin spektri shot noise bilan bir qatorda energiya tuzoqlari va interfeys noaniqliklari bilan bog‘liq bo‘lgan past chastotali 1/f shovqin komponenti bilan murakkablashishi aniqlandi. Tunnel ehtimoli WKB yaqinlashuvi asosida ifodalanib, ichki elektr maydon ta’siri Franz–Keldysh effekti orqali hisobga olindi. Natijalar elektr maydon ortishi bilan potensial to‘siqning torayishi va tunnellanish ehtimolining eksponentsial ortishini ko‘rsatadi. Tunnel toki va shovqin xususiyatlari Tsu–Esaki modeli asosida integral ko‘rinishda ifodalanib, ularning energiya spektri va zaryad tashuvchilar taqsimotiga bog‘liqligi tahlil qilindi.
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