STUDY OF THE WIDTH OF THE TRANSITION LAYER OF A BILAYER SILICIDE-SILICON SYSTEM
The paper presents the parameters of the energy bands of Si, ВаSi2 thin films and the width of the transition layer. The values of the band gap - Eg and the position of the valence band ceiling - EV were determined by the UFES method. The composition, surface morphology and electronic structure of the BaSi2/Si/BaSi2/Si (111)nanofilm system obtained by implantation of Ba+ ions into Si in combination with heating were studied using OES, UFES, SEM and X-ray diffraction analysis. The parameters of the energy bands were determined and the energy band diagram of the Si/BaSi2/Si system was constructed. The formation depth and thickness of the BaSi2 layer were determined for different energies of Ba+ ions in the range from 0.5 keV to 30 keV
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