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OBTAINING THIN CONSISTENT LAYERS ON THE SURFACE OF CAF2 FOR THE FORMATION OF IIIBV FILMS

Matching transition layers, interface, PDP-structure, distribution profile, nanofilms, atomic concentration, ion implantation, interdiffusion of atoms.

Authors

Thin (nanosized) matching transition layers were created by low-energy ion bombardment at the interface between the
GaAs/CaF 2 and GaP/CaF 2 systems. It has been found that the most efficient transition layer is formed in the Sr+ ion
implantation phase followed by heating at Т=900 K. Auger electron spectroscopy in combination with surface etching with
Ar+ ions was used to study the depth distribution profiles of Sr atoms in CaF 2 (111).

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